Samsung unveils new Flash tech. for up to 128GB on a chip
Posted on 25/10/07 23:35 by Seán Byrne                             
Samsung unveils new Flash tech. for up to 128GB on a chip

Samsung Electronics has unveiled what its claims to be the world's first 30nm 64Gb multi level cell NAND Flash memory chip, in which up to 16 of these cells can be combined to make a 128GB memory card.  This cell also marks the 8th consecutive year where the flash memory density has doubled over the previous year and also the 7th consecutive year of improving the nanometer scale, which started off at 100nm 1Gb NAND back in 2001. 

Samsung has developed this device using its new SaDPT manufacturing process.  This new process along with its CTF technology-based NAND Flash expect to improve cost efficiency for its next-generation nanometer scale designs, which should result in further lower Flash product pricing. 

Further technical information on this new Flash device can be found in this Tech-On article.

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By tony (guest), Fri 26 Oct 2007 21:45
so,do me a nice C drive wih one or to of these babies biggrin
By BitRate, Sat 27 Oct 2007 02:18
The random access data transfer rates with flash are still pretty bad compared to regular IDE/SATA hard drives.
By lui_gough, Sun 28 Oct 2007 02:53
Other way man! Random access with flash is super-fast as there's no seek latency - it's almost like RAM - it reads each cell directly and so has no problems keeping up with random access. Hard disks however, are appalling! Writing to flash is slow - that's one of the criticisms - and in order to solve it you need to pipeline the chips together - it's almost like "RAID"ing them together - now I wonder what happens when one decides to give up ... lol ... At the rate I see some of my flash cards/devices going - I'm not sure I'd want a C drive made of that anyway. Nevermind the cost.

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